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High Frequency Lead - Free 175 - 215MHz RA30H1721M RF Power Transistor Module

High Frequency Lead - Free 175 - 215MHz RA30H1721M RF Power Transistor Module

Brand Name : GAITGB
Model Number : RA30H1721M
MOQ : Negotiable
Packaging Details : Negotiable
Delivery Time : 3-15days
Payment Terms : T/T,Western Union,MoneyGram
Supply Ability : 1000pcs
Place of Origin : China
Price : Negotiable
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High Frequency Lead - Free 175 - 215MHz RA30H1721M RF Power Transistor Module 1. MITSUBISHI RF Power Transistor Module
2. Frequency Range: 175-215MHz
3. Output Power: 30W
4. Size: 66 x 21 x 9.88 mm


RF Power Transistor Module
Silicon RF Amplifier Power Semiconductors

High Frequency Devices

High Output Power Si MOS FET Module

VHF 50-300MHz / High Power

1. DESCRIPTION

The RA30H1721M is a 30-watt RF MOSFET Amplifier Module for 12.5-volt mobile radios that operate in the 175- to 215-MHz range.

The battery can be connected directly to the drain of the enhancement-mode MOSFET transistors. Without the gate voltage (VGG = 0V), only a small leakage current flows into the drain and the RF input signal attenuates up to 60 dB. The output power and drain current increase as the gate voltage increases. With a gate voltage around 4V (minimum), output power and drain current increases substantially. The nominal output power becomes available at 4V (typical) and 5V (maximum). At VGG = 5V, the typical gate current is 1mA.

This module is designed for non-linear FM modulation, but may also be used for linear modulation by setting the drain quiescent current with the gate voltage and controlling the output power with the input power.

2. FEATURES

1

Enhancement- Mode MOSFET Transistors (IDD ≅ 0 @ VDD = 12.5V , VGG = 0V)

2

Pout > 30W , ηT > 40% @ VDD = 12.5V , VGG = 5V , Pin = 50mW

3

Broadband Frequency Range: 175-215MHz

4

Low-Power Control Current IGG = 1mA (typ) at VGG = 5V

5

Module Size: 66 x 21 x 9.88 mm

6

Linear operation is possible by setting the quiescent drain current with the gate voltage and controlling the output power with the input power

3. BLOCK DIAGRAM


4. SPECIFICATIONS

Brand Name

MITSUBISHI

Mounting Type

Through Hole / DIP(Dual in -line package)

Package Outline

H2S

Lead Count

5

Lead-Free Type

RoHS Compliant

Packing

Antistatic tray , 10 modules / tray

Compatible with many other wireless communication products

Mass stock on-hand merchandise supply

We supply various electronic components and welcome your inquiries

5. OUTLINE DRAWING (Unit: mm)

6. OUR ADVANTAGE

• FAVORABLE PRICE

• A MULTIPLICITY OF SOURCES

• MASS STOCK FOR INSTANT DELIVERY

• ISO 9001:2008 CERTIFICATED

• COUTOMER-ORIENTED



Product Tags:

rf transmitter module

      

rf power module

      
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High Frequency Lead - Free 175 - 215MHz RA30H1721M RF Power Transistor Module Images

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